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MGP14N60E

SHORT CIRCUIT RATED LOW ON-VOLTAGE

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:121.76 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP14N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:125.43 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MGP14N60E

SHORT CIRCUIT RATED LOW ON-VOLTAGE

ONSEMI

安森美半导体

MGW14N60ED

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 6

文件:154 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MS14N60

900V N-Channel MOSFET

文件:404.26 Kbytes 页数:4 Pages

BWTECH

MSF14N60

N-Channel Enhancement Mode Power MOSFET

文件:402.81 Kbytes 页数:4 Pages

BWTECH

详细参数

  • 型号:

    MGP14N60E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ON Semiconductor

供应商型号品牌批号封装库存备注价格
ON
24+
90000
询价
ON/安森美
22+
TO-220
6000
十年配单,只做原装
询价
ON/安森美
23+
TO-220
6000
原装正品,支持实单
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
ON/安森美
22+
TO-220
99737
询价
ON
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON/安森美
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
ON/安森美
23+
TO-220
89630
当天发货全新原装现货
询价
ON/安森美
23+
TO
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多MGP14N60E供应商 更新时间2025-10-7 15:30:00