MGP14N60E中文资料安森美半导体数据手册PDF规格书
MGP14N60E规格书详情
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: Eoff = 63 J/A typical at 125°C
• High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
产品属性
- 型号：
MGP14N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
99737 |
询价 | |||
ON Semiconductor |
2022+ |
TO-220AB |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
onsemi(安森美) |
25+ |
- |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
onsemi(安森美) |
25+ |
- |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
TO-220 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON |
24+ |
90000 |
询价 |
