CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target application

文件：262.52 Kbytes 页数：12 Pages

INFINEON

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

文件：260.899 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：210.02 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOS Power Transistor

文件：560.84 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

文件：210.02 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOS Power Transistor

文件：560.84 Kbytes 页数：12 Pages

INFINEON

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

Infineon

英飞凌