New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：1.56068 Mbytes 页数：12 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：331.19 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

Infineon

英飞凌

Cool MOS Power Transistor

文件：647.24 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

文件：151.66 Kbytes 页数：12 Pages

Infineon

英飞凌