Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

文件：151.66 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.44Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)

文件：1.03638 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：647.24 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：680.24 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：647.24 Kbytes 页数：12 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

Infineon

英飞凌