isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 36A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：323.06 Kbytes 页数：2 Pages

ISC

无锡固电

AC-DC Power Supply

文件：851.1 Kbytes 页数：10 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，36 A，90 mΩ，TO-220F

SupreMOS MOSFET 是 Fairchild 新一代高压超级结 MOSFET，它采用了深度沟道填充工艺，与先前基于多 EPI 的技术相比，具有很大的优势。SupreMOS利用该高级技术和精确的工艺控制，提供了世界一流的RSP、超级开关性能和坚固性。该 SupreMOS MOSFET 可满足业界 AC-DC SMPS 对 PFC、服务器/通信电源、FPD TV 电源、ATX 电源和工业电源应用的要求。 •RDS(on) = 81mΩ（典型值）@ VGS = 10 V，ID = 18 A\n•超低栅极电荷（典型值Qg = 86nC）\n•低效输出电容\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

PolarHV HiPerFET Power MOSFET

文件：274.33 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：372.89 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged pol

文件：192.1 Kbytes 页数：4 Pages

IXYS

艾赛斯