E Series Power MOSFET

FEATURES • Fully lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definit

文件：197.47 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Reduced switching and conduction losses

文件：196.81 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Fully lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definit

文件：197.47 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

文件：212.7 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

文件：202.29 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

文件：202.29 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

·Fully lead (Pb)-free device\n·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss);

Vishay

威世

EF Series Power MOSFET with Fast Body Diode

·Fast body diode MOSFET using E series technology\n·Reduced trr, Qrr, and IRRM\n·Completely lead (Pb)-free device;

Vishay

威世