E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see

文件：199.25 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：198.58 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see

文件：199.25 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for de

文件：201.6 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for de

文件：201.6 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

文件：200.94 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss)\n·Reduced switching and conduction losses;

Vishay

威世

E Series Power MOSFET with Fast Body Diode

·Completely lead (Pb)-free device\n·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss);

Vishay

威世