E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced noise • Material categorization: for definit

文件：201.8 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Reduced switching and conduction losses

文件：201.13 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced noise • Material categorization: for definit

文件：201.8 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

·Completely lead (Pb)-free device\n·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss);

Vishay

威世