isc N-Channel MOSFET Transistor

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ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，20.6 A，190 mΩ，TO-220F

SuperFET® II MOSFET 是 Fairchild 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可去除额外元件，提高系统可靠性。 •700 V @TJ= 150°C\n•RDS(on) = 168 mΩ（典型值）\n•超低栅极电荷（典型值 Qg = 60 nC)\n•低有效输出电容（典型值 Coss(eff.) = 304 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

丝印：FCPF190N65F；Package：TO-220F；MOSFET – N-Channel, SUPERFET II, FRFET 650 V, 20.6 A, 190 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, prov

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ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switch •700 V @TJ= 150°C\n• Higher system reliability at low temperature operation\n•Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)\n• Low switching loss\n•Ultra Low Gate Charge (Typ. Qg = 60 nC)\n• Low switching loss\n•RDS(on) = 168 mΩ (Typ.)\n•100% Avalanche Tested\n•RoHS Compliant;

ONSEMI

安森美半导体