丝印：22206；Package：DSBGA(YZF)；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：484.12 Kbytes 页数：13 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：202；Package：DSBGA；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi

文件：496.59 Kbytes 页数：11 Pages

TI

德州仪器

丝印：23203；Package：DSBGA；CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

丝印：23203；Package：DSBGA；CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.06879 Mbytes 页数：13 Pages

TI

德州仪器