丝印：22206；Package：DSBGA；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

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TI

德州仪器

Switch DP2T

FEATURES • 3-200 MHz • 1 dB Insertion Loss • 45 dB Isolation • Small DIP Package

文件：122.5 Kbytes 页数：1 Pages

DAICO

1-4 Poles Coded Rotary Switches

文件：379.73 Kbytes 页数：4 Pages

ITT

1-4 Poles Coded Rotary Switches

文件：379.73 Kbytes 页数：4 Pages

ITT