CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

文件：1.15368 Mbytes 页数：14 Pages

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

文件：1.15368 Mbytes 页数：14 Pages

TI

德州仪器

12 V P-Channel FemtoFET MOSFET

文件：761.16 Kbytes 页数：13 Pages

TI

德州仪器

CSD23382F4 12-V P-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra-low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36-mm maximum height • Integrated ESD protection diode – Rated > 2-kV HBM – Rated > 2-kV CDM • Pb terminal plating • Halogen free • RoHS compliant 2 App

文件：1.15368 Mbytes 页数：14 Pages

TI

德州仪器