CSD23382F4T.B中文资料德州仪器数据手册PDF规格书

1 Features

• Low on-resistance

• Ultra-low Qg and Qgd

• Ultra-small footprint (0402 case size)

– 1.0 mm × 0.6 mm

• Low profile

– 0.36-mm maximum height

• Integrated ESD protection diode

– Rated > 2-kV HBM

– Rated > 2-kV CDM

• Pb terminal plating

• Halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.