CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器

8 V P-Channel NexFET Power MOSFET

文件：369.96 Kbytes 页数：12 Pages

TI

德州仪器

CSD23203W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.2-mΩ, –

文件：972.48 Kbytes 页数：15 Pages

TI

德州仪器