CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.06879 Mbytes 页数：13 Pages

TI

德州仪器

12V P-Channel FemtoFET MOSFET

文件：1.09894 Mbytes 页数：14 Pages

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.06879 Mbytes 页数：13 Pages

TI

德州仪器

CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET

1 Features • Low On-Resistance • Ultra-Low Qg and Qgd • High-operating drain current • Ultra-small footprint – 0.73 mm × 0.64 mm • Ultra-low profile – 0.36-mm max height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant

文件：1.06879 Mbytes 页数：13 Pages

TI

德州仪器