| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：25402；Package：VSONP；CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™ 文件：730.31 Kbytes 页数：17 Pages | TI 德州仪器 | TI | ||
丝印：25402；Package：VSONP；CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™ 文件：730.31 Kbytes 页数：17 Pages | TI 德州仪器 | TI | ||
丝印：CSD25404；Package：VSON-CLIP；CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This 文件：461.67 Kbytes 页数：12 Pages | TI 德州仪器 | TI | ||
丝印：CSD25404；Package：VSON-CLIP；CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This 文件：461.67 Kbytes 页数：12 Pages | TI 德州仪器 | TI | ||
丝印：CSD25404；Package：VSON-CLIP；CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This 文件：461.67 Kbytes 页数：12 Pages | TI 德州仪器 | TI | ||
丝印：CSD25404；Package：VSON-CLIP；CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Halogen Free • RoHS Compliant • Pb Free Terminal Plating • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This 文件：461.67 Kbytes 页数：12 Pages | TI 德州仪器 | TI | ||
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R 文件：900.87 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R 文件：900.87 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R 文件：900.87 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • High operating drain current • Ultra-small footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-low profile – 0.36 mm max height • Integrated ESD protection diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and halogen free • R 文件：900.87 Kbytes 页数：11 Pages | TI 德州仪器 | TI |
技术参数
- VGS (V)：
-6
- Configuration：
Single
- Rds(on) max at VGS=4.5 V (mOhms)：
9.9
- Rds(on) max at VGS=2.5 V (mOhms)：
14
- Id peak (Max) (A)：
-80
- Id max cont (A)：
-5
- QG typ (nC)：
18.9
- QGD typ (nC)：
4.2
- QGS typ (nC)：
3.2
- VGSTH typ (V)：
-0.7
- Package (mm)：
WLP 1.5x1.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
DSBGA-9 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
TI |
25+23+ |
DSBGA |
25696 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
TI |
16+ |
DSBGA |
10000 |
原装正品 |
询价 | ||
TI |
25+ |
9-BGA |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TI(德州仪器) |
2021+ |
DSBGA-9 |
499 |
询价 | |||
TI/德州仪器 |
24+ |
DSBGA-9 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
TI |
22+ |
9UFBGA DSBGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
TI |
26+ |
DSBGA-9 |
8880 |
原装认准芯泽盛世！ |
询价 |
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