CSD25481F4T中文资料德州仪器数据手册PDF规格书

1 Features

• Ultra-low on resistance

• Ultra-low Qg and Qgd

• High operating drain current

• Ultra-small footprint (0402 Case Size)

– 1 mm × 0.6 mm

• Ultra-low profile

– 0.36 mm max height

• Integrated ESD protection diode

– Rated >4 kV HBM

– Rated >2 kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.