丝印：CSD20060；Package：TO-247-3；Silicon Carbide Schottky Diode

Features • 600-Volt Schottky Rectifer • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coeffcient on VF Benefts • Replace Bipolar with Unipolar Rectifer

文件：444.35 Kbytes 页数：6 Pages

CREE

科锐

丝印：22202；Package：DSBGA；CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

文件：912.39 Kbytes 页数：11 Pages

TI

德州仪器

丝印：22202；Package：DSBGA；CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

文件：912.39 Kbytes 页数：11 Pages

TI

德州仪器

CSD22202W15 P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description The device is designed to de

文件：912.39 Kbytes 页数：11 Pages

TI

德州仪器

丝印：22204；Package：DSBGA；CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

文件：530.32 Kbytes 页数：12 Pages

TI

德州仪器

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

文件：530.32 Kbytes 页数：12 Pages

TI

德州仪器

丝印：22204；Package：DSBGA；CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

文件：530.32 Kbytes 页数：12 Pages

TI

德州仪器

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm ×

文件：530.32 Kbytes 页数：12 Pages

TI

德州仪器

丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器

丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器