| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CSD22204W | 丝印:22204;Package:DSBGA;CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 文件:530.32 Kbytes 页数:12 Pages | TI 德州仪器 | TI | |
CSD22204W | 8 V P-Channel NexFET Power MOSFET 文件:470.61 Kbytes 页数:12 Pages | TI 德州仪器 | TI | |
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 文件:530.32 Kbytes 页数:12 Pages | TI 德州仪器 | TI | ||
丝印:22204;Package:DSBGA;CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 文件:530.32 Kbytes 页数:12 Pages | TI 德州仪器 | TI | ||
CSD22204W –8 V P-Channel NexFET™ Power MOSFET 1 Features 1• Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 文件:530.32 Kbytes 页数:12 Pages | TI 德州仪器 | TI | ||
CSD22204W ?? V P-Channel NexFET Power MOSFET 文件:1.02841 Mbytes 页数:15 Pages | TI 德州仪器 | TI | ||
8 V P-Channel NexFET Power MOSFET 文件:470.61 Kbytes 页数:12 Pages | TI 德州仪器 | TI | ||
CSD22204W | 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、9.9mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET 这款 –8V、8.2mΩ、1.5mm × 1.5mm 器件设计用于在超薄且具有出色散热特性的超小外形尺寸封装内提供最低的导通电阻和栅极电荷。 低导通电阻与小型封装尺寸和超薄特性结合在一起,使得此器件非常适合于电池供电运行的空间受限应用。 • 低电阻\n• 无铅\n• 符合 RoHS 环保标准\n• 栅 - 源电压钳位; | TI 德州仪器 | TI |
技术参数
- VGS (V):
-6
- Configuration:
Single
- Rds(on) max at VGS=4.5 V (mOhms):
9.9
- Rds(on) max at VGS=2.5 V (mOhms):
14
- Id peak (Max) (A):
-80
- Id max cont (A):
-5
- QG typ (nC):
18.9
- QGD typ (nC):
4.2
- QGS typ (nC):
3.2
- VGSTH typ (V):
-0.7
- Package (mm):
WLP 1.5x1.5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+23+ |
DSBGA |
25696 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
TI |
16+ |
DSBGA |
10000 |
原装正品 |
询价 | ||
TI |
25+ |
9-BGA |
6675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TI(德州仪器) |
2021+ |
DSBGA-9 |
499 |
询价 | |||
TI/德州仪器 |
24+ |
DSBGA-9 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
TI |
22+ |
9UFBGA DSBGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
TI |
25+ |
DSBGA-9 |
8880 |
原装认准芯泽盛世! |
询价 | ||
TI |
25+ |
DSBGA (YZF) |
6000 |
原厂原装,价格优势 |
询价 |
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