丝印：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25211；Package：DSBGA；CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

文件：956.23 Kbytes 页数：14 Pages

TI

德州仪器

丝印：25211；Package：DSBGA；CSD25211W1015, P-Channel NexFET™ Power MOSFET

1 Features • Ultra-low on resistance • Ultra-low Qg and Qgd • Small footprint 1.0 mm × 1.5 mm • Low profile 0.62 mm height • Pb Free • Gate-source voltage clamp • Gate ESD protection – 3 kV • RoHS compliant • Halogen free 2 Applications • Battery Management • Load Switch • Battery P

文件：956.23 Kbytes 页数：14 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

文件：730.31 Kbytes 页数：17 Pages

TI

德州仪器

丝印：25402；Package：VSONP；CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Low RDS(on) • Pb and Halogen Free • RoHS Compliant • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • DC-DC Converters • Battery Management • Load Switch • Battery Protection 3 Description This –20-V, 7.7-mΩ NexFET™

文件：730.31 Kbytes 页数：17 Pages

TI

德州仪器