丝印：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25202；Package：DSBGA；CSD25202W15 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Low-Resistance • Small Footprint 1.5 mm × 1.5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the

文件：471.48 Kbytes 页数：11 Pages

TI

德州仪器

SL 5.08HC/14/90B 3.2SN OR BX CO

文件：541.7 Kbytes 页数：6 Pages

WEIDMULLER

魏德米勒