丝印：253；Package：SO-8；Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：253；Package：SO-8；Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：25304；Package：DSBGA；CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 27 mΩ, –20 V, P-Channel device

文件：476.64 Kbytes 页数：11 Pages

TI

德州仪器

丝印：2530C04L；Package：PG-DSO-8；MOSFET OptiMOS™ 3 Power‑Transistors, 40 V

Features • Complementary N‑ and P‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.1634 Mbytes 页数：18 Pages

INFINEON

英飞凌

丝印：2530；Package：SOT-23(DBV)；Current-Limited, Power-Distribution Switches

FEATURES 2• Single Power Switch • Pin for Pin with Existing TI Switch Portfolio™ • Rated Currents of 0.5 A current• ±25% Accurate, Fixed, Constant Current Limit • Fast Over-Current Response – 2 μs • Operating Range: 2.7 V to 5.5 V • Deglitched Fault Reporting • Reverse Current Blocking

文件：1.1157 Mbytes 页数：19 Pages

TI

德州仪器

丝印：2530；Package：SOT-23(DBV)；Current-Limited, Power-Distribution Switches

FEATURES 2• Single Power Switch • Pin for Pin with Existing TI Switch Portfolio™ • Rated Currents of 0.5 A current• ±25% Accurate, Fixed, Constant Current Limit • Fast Over-Current Response – 2 μs • Operating Range: 2.7 V to 5.5 V • Deglitched Fault Reporting • Reverse Current Blocking

文件：1.1157 Mbytes 页数：19 Pages

TI

德州仪器

丝印：2530；Package：SOT-23(DBV)；Current-Limited, Power-Distribution Switches

FEATURES 2• Single Power Switch • Pin for Pin with Existing TI Switch Portfolio™ • Rated Currents of 0.5 A current• ±25% Accurate, Fixed, Constant Current Limit • Fast Over-Current Response – 2 μs • Operating Range: 2.7 V to 5.5 V • Deglitched Fault Reporting • Reverse Current Blocking

文件：1.1157 Mbytes 页数：19 Pages

TI

德州仪器