丝印：253；Package：SO-8；Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：253；Package：SO-8；Wide bandwidth dual JFET operational amplifiers

Features ■ Low power consumption ■ Wide common-mode (up to VCC+) and differential voltage range ■ Low input bias and offset current ■ Output short-circuit protection ■ High input impedance JFET input stage ■ Internal frequency compensation ■ Latch up free operation ■ High slew rate 16 V/μs

文件：908.15 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Wide bandwidth dual JFET operational amplifiers

DESCRIPTION The LF353 are high speed J–FET input dual operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coef

文件：909.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

文件：235.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

文件：235.36 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

文件：24.81 Kbytes 页数：2 Pages

NTE