丝印：LF412CN；Package：PDIP(P)；LF412-N Low Offset, Low Drift Dual JFET Input Operational Amplifier

1 Features 1• Internally Trimmed Offset Voltage: 1 mV (Max) • Input Offset Voltage Drift: 7 μV/°C (Typ) • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA / √Hz • Wide Gain Bandwidth: 3 MHz (Min) • High Slew Rate: 10V/μs (Min) • Low Supply Current: 1.8 mA/Amplifier • High I

文件：3.20504 Mbytes 页数：22 Pages

TI

德州仪器

Low Drift Dual JFET Input Operational Amplifier

文件：3.20338 Mbytes 页数：22 Pages

TI

德州仪器

丝印：LF412CN；Package：PDIP(P)；LF412-N Low Offset, Low Drift Dual JFET Input Operational Amplifier

1 Features 1• Internally Trimmed Offset Voltage: 1 mV (Max) • Input Offset Voltage Drift: 7 μV/°C (Typ) • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA / √Hz • Wide Gain Bandwidth: 3 MHz (Min) • High Slew Rate: 10V/μs (Min) • Low Supply Current: 1.8 mA/Amplifier • High I

文件：3.20504 Mbytes 页数：22 Pages

TI

德州仪器

丝印：LF412CN；Package：PDIP(P)；LF412-N Low Offset, Low Drift Dual JFET Input Operational Amplifier

1 Features 1• Internally Trimmed Offset Voltage: 1 mV (Max) • Input Offset Voltage Drift: 7 μV/°C (Typ) • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA / √Hz • Wide Gain Bandwidth: 3 MHz (Min) • High Slew Rate: 10V/μs (Min) • Low Supply Current: 1.8 mA/Amplifier • High I

文件：3.20504 Mbytes 页数：22 Pages

TI

德州仪器

丝印：LF412CN；Package：PDIP(P)；LF412-N Low Offset, Low Drift Dual JFET Input Operational Amplifier

1 Features 1• Internally Trimmed Offset Voltage: 1 mV (Max) • Input Offset Voltage Drift: 7 μV/°C (Typ) • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA / √Hz • Wide Gain Bandwidth: 3 MHz (Min) • High Slew Rate: 10V/μs (Min) • Low Supply Current: 1.8 mA/Amplifier • High I

文件：3.20504 Mbytes 页数：22 Pages

TI

德州仪器