POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

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COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The central semiconductor mje240, mje250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

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CENTRAL

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

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MOTOROLA

摩托罗拉

isc Silicon PNP Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to Type MJE243 APPLICATIONS • Designed for low power audio amplifier and low-cur

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ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-126 CASE MJE240, MJE250 series types are complementary silicon power transistors designed for audio amplifier and switching applications.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP transistor in a TO-126 Plastic Package.

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FOSHAN

蓝箭电子

COMPLEMENTARY SILICON POWER TRANSITORS

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CENTRAL

Complementary Silicon Power Plastic Transistors

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ONSEMI

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Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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4.0 A，100 V，PNP 双极功率晶体管

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications. • High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)MJE243, MJE253\n• High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 -MJE243, MJE253\n• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc\n• High Current Gain Bandwidth Product - fT =;

ONSEMI

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