MJE253中文资料4.0 A，100 V，PNP 双极功率晶体管数据手册ONSEMI规格书

描述 Description

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

特性 Features

• High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc hFE = 40-200 hFE = 40-120 -MJE243, MJE253
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB
• Pb-Free Packages are Available

简介

MJE253属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJE253晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。