丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器

丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：478.42 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA(YZF)；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：484.12 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：478.42 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA(YZF)；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：484.12 Kbytes 页数：13 Pages

TI

德州仪器

CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：484.12 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA(YZF)；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：484.12 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：478.42 Kbytes 页数：13 Pages

TI

德州仪器

丝印：22206；Package：DSBGA；CSD22206W –8-V P-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Lead Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Load Switch Applications • Battery Management • Battery Protection 3 Description This –8-V, 4.7-mΩ, 1

文件：478.42 Kbytes 页数：13 Pages

TI

德州仪器