丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器

8-V P-Channel NexFET Power MOSFET

文件：618.32 Kbytes 页数：11 Pages

TI

德州仪器

丝印：205；Package：PICOSTAR；CSD22205L –8-V P-Channel NexFET™ Power MOSFET

1 Features • Low resistance • Small footprint 1.2 mm × 1.2 mm • Low profile 0.36-mm height • Lead free • Gate-source voltage clamp • Gate ESD protection • RoHS compliant • Halogen free 2 Applications • Battery management • Load switch • Battery protection 3 Description This –8-V,

文件：1.13486 Mbytes 页数：13 Pages

TI

德州仪器

65V, 7.6A High Current Single H-Bridge with Integrated Current-Sense

General Description The MAX22205 integrates a high current 65V, 7.6AMAX H-Bridge to drive one Brushed DC motor or one half Stepper motor. The H-Bridge FETs feature very low impedance, resulting in high driving efficiency and low heat. The typical total RON (high-side + low-side) is 0.15Ω. The H

文件：255.99 Kbytes 页数：22 Pages

AD

亚德诺

2A, Integrated, Switch, High-Efficiency

文件：1.67771 Mbytes 页数：29 Pages

MICREL

麦瑞半导体

2A, Integrated, Switch, High-Efficiency

文件：1.67771 Mbytes 页数：29 Pages

MICREL

麦瑞半导体