CSD23280F3中文资料德州仪器数据手册PDF规格书

1 Features

• Low On-Resistance

• Ultra-Low Qg and Qgd

• High-operating drain current

• Ultra-small footprint

– 0.73 mm × 0.64 mm

• Ultra-low profile

– 0.36-mm max height

• Integrated ESD protection diode

– Rated > 4-kV HBM

– Rated > 2-kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing a substantial

reduction in footprint size.