CEB38N65SF说明书PDF资料供应价格华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB38N65SF	文件：512.97 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. 文件：512.97 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF38N65S	文件：695.48 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time(Trr). Drive circuits can be simple. APPLICATIONS Sever and telecom power supplies. String PV inverters. 文件：695.48 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF38N65SA	文件：530.76 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：530.76 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF38N65SF	文件：512.97 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. 文件：512.97 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB38N65SF供应商更新时间2025-10-6 12:00:00