N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 package.

文件：496.11 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 57V, 56A ,RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：291.74 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 package.

文件：496.11 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 57V, 56A ,RDS(ON) = 19mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：291.74 Kbytes 页数：4 Pages

CET-MOS

华瑞

Multifunctional high-brightness light-emitting diode (LED) driver integrated circuit

文件：759.5 Kbytes 页数：9 Pages

HMSEMI

华之美半导体