CEP6106

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■57V,56A,RDS(ON)=19mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■TO-220&TO-263package.

CEP6106

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 57V,56A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

HM6106

Multifunctionalhigh-brightnesslight-emittingdiode(LED)driverintegratedcircuit

HM6106A

Multifunctionalhighbrightnesslightemittingdiode(LED)driverintegratedcircuit

HM6106F

HighCurrentIO/-1.2/1.5A3-PHASEBRIDGEDRIVER

KFF6106A

ExcellentReturnLoss

LS6106

Game(slotmachine)

LT6106

36VLowCostHighSideCurrentSenseinaSOT-23

FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C

LT6106

HighTemperatureHighSideCurrentSenseAmpinSOT-23

FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°Cand150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65

LT6106

36VLowCostHighSideCurrentSenseinaSOT-23