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CEB6086L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB6086L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB6086L

N Channel MOSFET;

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM6086

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEM6086L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP6086

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

技术参数

  • BVDSS(V):

    60

  • Rds(on)mΩ@10V:

    10

  • Rds(on)mΩ@4.5V:

    13.5

  • ID(A):

    72

  • Qg(nC)@4.5V(typ):

    33

  • RθJC(℃/W):

    2

  • Pd(W):

    75

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET/華瑞
23+
TO-263
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022+
TO-263
800
原厂代理 终端免费提供样品
询价
CET/華瑞
23+
TO-263
122999
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CET
23+
TO-263
6000
原装正品,支持实单
询价
CET/華瑞
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
询价
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
询价
CET/華瑞
20+
TO-263
300000
现货很近!原厂很远!只做原装
询价
CET
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
CET/華瑞
24+
TO-263
60000
询价
NK/南科功率
2025+
TO-263
986966
国产
询价
更多CEB6086L供应商 更新时间2025-7-28 11:00:00