N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 72A, RDS(ON) = 10mW @VGS = 10V. RDS(ON) = 13.5mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：440.36 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 72A, RDS(ON) = 10mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 13.5mW @VGS = 4.5V.

文件：666.62 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 50A, RDS(ON) = 8.7mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：416.11 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 50A, RDS(ON) = 8.7mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：641.52 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：412.78 Kbytes 页数：4 Pages

CET

华瑞