| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CEB6086 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
CEB6086 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=70A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
CEB6086 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
ESDWristStrapTester | POMONA Pomona Electronics |  | ||
DesignConsiderationforInterleavedBoundaryConductionModePFC | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | ||
13LEDsALC*FlashandIllumination | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | ||
X-RayCCDCamera TheC6086seriesisacompact,lightweight,highresolutionX-rayCCDcamera.ItconsistsofanX-raysensitivescintillator(P43)coatedonataperedfiberopticbundledirectcoupledtoaCCDcamera.TheC6086-90cameracontrollerincorporatesa10-bitA/Dconverterforpreciseimageacquisition | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |  | ||
DIPLEXERSFORCABLEMODEMS,SETTOPBOXESANDGATEWAYS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse Electronics |  | ||
BROADBAND:RF&WIRELESS RF,HFC&CATVAPPLICATIONS PluseoffersacomprehensivelineofRFmagneticcomponentsforuseinwirelessandRFapplications, includingmobilecommunications,cabletelevision,hybridfiber/coax(HFC)equipment,cablemodems,set-topboxes,andhomenetworking.Thecomponentsareal | pulse Pulse Electronics | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2023+ |
8700 |
原装现货 |
询价 | |||
23+ |
N/A |
46380 |
正品授权货源可靠 |
询价 | |||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
原厂 |
2020+ |
TO-263 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
CET/華瑞 |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
CET/華瑞 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CET/華瑞 |
2022 |
TO-263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
CET/華瑞 |
2022+ |
TO-263 |
800 |
原厂代理 终端免费提供样品 |
询价 | ||
CET |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
CET/華瑞 |
21+ROHS |
TO-263 |
122999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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