C3M0075120K1

型号：C3M0075120K1；Package：TO-247-4LLP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features •Optimizedpackagewithseparatedriversourcepin •LowerprofileTO-247-4packagebody •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant TypicalAppl

C3M0075120K-A

型号：C3M0075120K-A；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

C3M0120065D

型号：C3M0120065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen

C3M0120065J

型号：C3M0120065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdGenerationSiCMOSFETtechnology •Lowinductancepackagewithdriversourcepin •7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qr

C3M0120065K

型号：C3M0120065K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •

C3M0120065L

型号：C3M0120065L-TR；Package：TOLL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features •3rdgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant TypicalApp

C3M0120090

型号：C3M0120090D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Incre

C3M0120100J

型号：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •Lowparasiticinductancewithseparatedriversourcepin •7mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-resistance •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Lowoutputcapacitance(60pF) •Halog

C3M0120100K

型号：C3M0120100K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •

C3M0160120D

型号：C3M0160120D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •C3MTMSiCMOSFETtechnology •HighblockingvoltagewithlowOn-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Inc