丝印：C3S；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current : ICC = 26.0 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz • High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz • Power gain : GP = 32.8 dB MIN. @ f = 1

文件：345.21 Kbytes 页数：17 Pages

RENESAS

瑞萨

丝印：C3S；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current : ICC = 26.0 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz • High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz • Power gain : GP = 32.8 dB MIN. @ f = 1

文件：345.21 Kbytes 页数：17 Pages

RENESAS

瑞萨

For stud devices

文件：257.11 Kbytes 页数：3 Pages

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文件：2.29039 Mbytes 页数：24 Pages

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Pilot devices The core offering

文件：2.29039 Mbytes 页数：24 Pages

ABB

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Pilot devices The core offering

文件：2.29039 Mbytes 页数：24 Pages

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