丝印：C3M0040120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.02005 Mbytes 页数：12 Pages

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丝印：C3M0040120K；Package：TO-247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.02091 Mbytes 页数：12 Pages

Cree

科锐

丝印：C3M0040120K1；Package：TO-247-4L-LP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.07762 Mbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0040120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.02005 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0040120K；Package：TO-247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.02091 Mbytes 页数：12 Pages

Cree

科锐

丝印：C3M0040120K1；Package：TO-247-4L-LP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.07762 Mbytes 页数：13 Pages

WOLFSPEED