丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.00879 Mbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.37022 Mbytes 页数：10 Pages

Cree

科锐

丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.00879 Mbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0065100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.37022 Mbytes 页数：10 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 78mΩ）@VGS=15V Tc=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Renewable energy ·EV battery chargers ·High voltage DC/DC converters ·Switch Mode Power Supplies

文件：399.41 Kbytes 页数：4 Pages

ISC

无锡固电