C3M0900170D芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
C3M0900170D	文件：4.69333 Mbytes Page：13 Pages	丝印：C3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Ha 文件：4.69333 Mbytes 页数：13 Pages	WOLFSPEED	WOLFSPEED
C3M0900170D	文件：4.69333 Mbytes Page：13 Pages	丝印：C3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Ha 文件：4.69333 Mbytes 页数：13 Pages	WOLFSPEED	WOLFSPEED

更多C3M0900170D供应商更新时间2025-11-24 9:36:00