丝印：C3Q；CMOS INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 1.8 to 3.6 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 1.8 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) • Low insertion loss : Lins1 = 0.6 dB TYP. @ f = 0.05 to 1.0 GHz, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins2 = 0.8

文件：226.33 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：C3Q；CMOS INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 1.8 to 3.6 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 1.8 to 3.6 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.4 V (0 V TYP.) • Low insertion loss : Lins1 = 0.6 dB TYP. @ f = 0.05 to 1.0 GHz, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins2 = 0.8

文件：226.33 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：C3Q；WIDE BAND SPDT SWITCH

文件：587.06 Kbytes 页数：11 Pages

CEL

California Eastern Labs