丝印：C3M0075120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.4317 Mbytes 页数：10 Pages

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科锐

丝印：C3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.13451 Mbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0075120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.4317 Mbytes 页数：10 Pages

Cree

科锐

丝印：C3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.13451 Mbytes 页数：13 Pages

WOLFSPEED