丝印：C3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.13451 Mbytes 页数：13 Pages

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分立式碳化硅肖特基二极管

1200 V, 75 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

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Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.16329 Mbytes 页数：13 Pages

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