丝印：E3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 4.7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recove

文件：1.16329 Mbytes 页数：13 Pages

WOLFSPEED

Discrete Silicon Carbide Schottky Diodes

Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of Silicon Carbide (SiC) MOSFETs, automotive qualified, PPAP capable and humidity resistant MOSFET. It features Wolfspeed’s 3rd generation rugged technology, offering the industry’s lowest switching losses and highe .css-1d32f0i h1{font-size:4.4rem;font-weight:700;line-height:1.2;margin-bottom:0.425em;}@media (min-width: 768px){.css-1d32f0i h1{font-size:5.4rem;}}.css-1d32f0i h2{font-size:3.6rem;font-weight:700;line-height:1.2;margin-bottom:0.475em;}@media (min-width: 768px){.css-1d32f0i h2{font-size:4rem;}}.css;

Wolfspeed(CREE)

Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.13451 Mbytes 页数：13 Pages

WOLFSPEED

OMRON/欧姆龙

上传：深圳市英创达电子半导体有限公司

OMRON/欧姆龙

上传：深圳市英创达电子半导体有限公司