丝印：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.023 Mbytes 页数：10 Pages

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丝印：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.33107 Mbytes 页数：10 Pages

Cree

科锐

丝印：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halog

文件：1.023 Mbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0120100J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.33107 Mbytes 页数：10 Pages

Cree

科锐