C3M0160120J芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
C3M0160120J	文件：1.05638 Mbytes Page：10 Pages	丝印：C3M0160120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr 文件：1.05638 Mbytes 页数：10 Pages	WOLFSPEED	WOLFSPEED
C3M0160120J	文件：1.05638 Mbytes Page：10 Pages	丝印：C3M0160120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr 文件：1.05638 Mbytes 页数：10 Pages	WOLFSPEED	WOLFSPEED

更多C3M0160120J供应商更新时间2025-9-20 15:50:00