C3M0120100K芯片代码芯片丝印反查-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
C3M0120100K	文件：929.9 Kbytes Page：11 Pages	丝印：C3M0120100K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • 文件：929.9 Kbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
C3M0120100K	文件：929.9 Kbytes Page：11 Pages	丝印：C3M0120100K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • 文件：929.9 Kbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
C3M0120100K	文件：1.05757 Mbytes Page：11 Pages	C3MTM SiC MOSFET technology 文件：1.05757 Mbytes 页数：11 Pages	Cree 科锐	Cree

更多C3M0120100K供应商更新时间2025-9-21 14:02:00