丝印：C3M0065100K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：974.94 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0065100K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：974.94 Kbytes 页数：11 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)=78mΩ（TYP.）@VGS=15V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：771.05 Kbytes 页数：7 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.42424 Mbytes 页数：11 Pages

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