丝印：C3M0075120；Package：TO-247-3；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：877.49 Kbytes 页数：10 Pages

Cree

科锐

丝印：C3M0075120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

文件：940.39 Kbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0075120D-A；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

文件：940.39 Kbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0075120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.13451 Mbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0075120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：934.32 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0075120K1；Package：TO-247-4LLP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

文件：983.68 Kbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0075120K-A；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：934.32 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0075120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.4317 Mbytes 页数：10 Pages

Cree

科锐

丝印：C3M0075120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：1.36001 Mbytes 页数：11 Pages

Cree

科锐

丝印：C3M0075120；Package：TO-247-3；Silicon Carbide Power MOSFET C3M MOSFET Technology

文件：877.49 Kbytes 页数：10 Pages

Cree

科锐