丝印：C3M0032120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

文件：792.56 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0032120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：793.43 Kbytes 页数：11 Pages

Cree

科锐

丝印：C3M0032120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

文件：792.56 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0032120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：793.43 Kbytes 页数：11 Pages

Cree

科锐